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Please use this identifier to cite or link to this item: https://idr.niser.ac.in/jspui/handle/123456789/90
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dc.contributor.authorSahu, Adarsha Mohit-
dc.contributor.authorPal, Shovon-
dc.date.accessioned2022-08-10T09:00:20Z-
dc.date.available2022-08-10T09:00:20Z-
dc.date.issued2022-06-21-
dc.identifier.urihttps://idr.niser.ac.in/jspui/handle/123456789/90-
dc.language.isoen_USen_US
dc.publisherSchool of Physical Science, NISER, Bhubaneswaren_US
dc.relation.ispartofseries;T310-
dc.subjectPhysicsen_US
dc.subjectSemiconductoren_US
dc.subjectFabry -perot termen_US
dc.subjectDie-electricen_US
dc.subjectTHz (Terahertz domain)en_US
dc.subjectPhoton energyen_US
dc.titleTHz properties of n-doped semiconductor and a dielectricen_US
dc.typeThesisen_US
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