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http://idr.niser.ac.in:8080/jspui/handle/123456789/1067Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Senapati, Kartikeswar | - |
| dc.date.accessioned | 2024-12-02T11:55:35Z | - |
| dc.date.available | 2024-12-02T11:55:35Z | - |
| dc.date.issued | 2013-07-29 | - |
| dc.identifier.citation | Pal, A., Senapati, K., Barber, Z. H., & Blamire, M. G. (2013). Electric-field-dependent spin polarization in GdN spin filter tunnel junctions. Advanced Materials (Deerfield Beach, Fla.), 25(39), 5581–5585. | en_US |
| dc.identifier.uri | https://doi.org/10.1002/adma.201300636 | - |
| dc.identifier.uri | http://idr.niser.ac.in:8080/jspui/handle/123456789/1067 | - |
| dc.description.abstract | Tunnel junctions incorporating GdN ferromagnetic semiconductor barriers show a spin polarization exceeding 90% and a high conductance. These devices show an unusual low-bias conductance peak arising from a strong bias-dependence of the spin polarization. This originates from a strong magneto-electric coupling within a double Schottky barrier formed with the NbN electrodes. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Advanced Materials | en_US |
| dc.title | Electric-Field-Dependent Spin Polarization in GdN Spin Filter Tunnel Junctions | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | Journal Papers | |
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