Electric-Field-Dependent Spin Polarization in GdN Spin Filter Tunnel Junctions

Please use this identifier to cite or link to this item: http://idr.niser.ac.in:8080/jspui/handle/123456789/1067

Title:	Electric-Field-Dependent Spin Polarization in GdN Spin Filter Tunnel Junctions
Authors:	Senapati, Kartikeswar
Issue Date:	29-Jul-2013
Publisher:	Advanced Materials
Citation:	Pal, A., Senapati, K., Barber, Z. H., & Blamire, M. G. (2013). Electric-field-dependent spin polarization in GdN spin filter tunnel junctions. Advanced Materials (Deerfield Beach, Fla.), 25(39), 5581–5585.
Abstract:	Tunnel junctions incorporating GdN ferromagnetic semiconductor barriers show a spin polarization exceeding 90% and a high conductance. These devices show an unusual low-bias conductance peak arising from a strong bias-dependence of the spin polarization. This originates from a strong magneto-electric coupling within a double Schottky barrier formed with the NbN electrodes.
URI:	https://doi.org/10.1002/adma.201300636 http://idr.niser.ac.in:8080/jspui/handle/123456789/1067
Appears in Collections:	Journal Papers

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